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Ultrafast diodes   

   

SC “VSP-Mikron” develop and manufacture ultrafast diodes dice (UFD).   

UFD are being used in switch-mode power supply manufacturing, converters, batteries protection circuits against polarity reversal and etc. UFD dice are being manufactured with the planar technology on the silicon epitaxial structures. 

 

 

 
Item name 
Die size, mm 
Vrrm,V
If(av),A
VF @If(av), 25ºC, V
IR@25ºC, VR=VR, uA
Trr @If=1A;
Vb=30V;
dI/dt=100A/uS, nS
5,6*5,6
400
100
1,3
50
70
KD15040UF 6,8*6,8 400 150 1,3 50 70
КD0560UF
1,72*1,72
600 5 1,5 10 50
КD0860UF
2,05*2,05
600 8 1,35 10 70
КD1060UF
2,24*2,24
600 10 1,35 10 65
КD1560UF
2,63*3,55
600 15 1,35 10 70
КD2560UF
3,14*4,92
600 25 1,35 10 70
5,4*5,2
600
50
1,35
20
70
High voltage diodes with soft reverse recovery time
Item name Die size, mm
Vrrm,V
 If(av),A
VF @If(av), 25ºC, V
IR@25ºC, VR=VR, uA
Trr@1A, 30V, 200A/uS
KD01120F 1,62*1,62 1200 1 1,7 10 150
KD08120F 2,4*2,4 1200 8 3 50 50
3,5*3,5
1200
10
2,4
100
50
KD15120F 3,5*3,5 1200 15 3,2 20 65(100A/uS)
3,5*3,5
1200
15
2,6
30
70
5,5*4,5
1200
25
2,2
100
50
8,7*5
1200
50
2,3
100
70
КD50120FU 6,2*6,2 1200 50 2 20 100
8,7*5,0
1200
60
2,4
100
100
  8,0*8,0
1200
100
1,9
40
75
KD150120F 10,8*9,3 1200 150 2,3 100 90
KD50170F  7,54*7,54 1700 50 2,3 100 120 
KD100170F 10,8*8,3 1700 50 2,4 100 120
7,54*7,54
1800
50
2,4
100
120
10,8*8,3
1800
100
2,4
100
120
7,54*7,54
2500
50
2,45
100
150
10,8*8,3
2500
100
2,45
100
150
10,8*8,7
3300
75
2,6
100
700
 10,8*9,3
4500 
75
2,6
100
700
 
 
 

                  

                  Unit symbol and abbreviation 

   

- VB – diode breakdown voltage with the reverse current set level; 

- VF  - diode  forward constant voltage with the direct current set level; 

- IR – diode leakage current  (reverse) with the reverse voltage set level; 

- IF(AV) – diode average direct current; 

- trr   - diode reverse-recovering time;  

   

Ultrafast diodes key specifications  

  

- Wide operating current and voltage range: IF(AV)=1÷25A; VRRM=400÷1200V;

- Low forward voltage – VF

- Low level of the reverse current –IR

- Low dissipated power; 

- Basic electrical parameters  (VB, IR, IRRM) are being tested 100% with the normal conditions (ТА=25ºС), also sampling testing on each wafer for VF  with forward current IF(AV)  rating value

 

Reverse current is being tested by sampling on 100% wafers with elevated temperature. 

Normality for another parameters in spec proved by die construction. 

After electrical testing visual inspection is being held with the 100% of potential faulty dice rejection. 

SC “VSP-Mikron”  manufacture and supply UFD dice in the 4” wafer form.   

Ti-Ni-Ag metallization allow to make chipping on the die holder with soldering method using PbSn solders. 

We also offer to our customer different possible die sizes to choose good correlation between price and quality. 

We also provide design and developing of the UFD with customer required parameters and later mass production.