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 SCHOTTKY BARRIER RECTIFIERS   Mechanical data.  
   
 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR DICE ARRAYS                      A - Die Size
   B - Top Metal Size
 KDM-XXYYY and KDM-XXYYYZ  Ax-Bx=Ay-By= 140um
   Scribe Line Width - 80um
 Maximum Operating Junction Temperature — Tj=150ºC  
   Thickness:  D=300um max.
     
   Top metal:  a) Al (For Wire Bonding)
     b) Al-Ni-Ag (For Soldering)
   Back metal:  Ti-Ni-Ag (For Soldering)

 

 
 Schottky diodes (dice on 6" wafers), low Vf
      
Spec. Part Number Chip Size, mil Chip Size, mm Vrrm, V If(av), A Ifsm, A

Vf@If(av), 25°C, mV

Ir@25°C, Vr=Vr Rated, uA Ir@125°C, Vr=Vr Rated, mA Gross dice q-ty per wafer, dice 6"
Feb. 2013
55
1.40 x 1.40
40
3
80
510
35
23
7600
Oct. 2011
55
1.40 x 1.40
65
3
80
620
100
30
7600
 March. 2013
69
1.75 x 1.75
40
3
125
450
50
35
5357
Jan. 2014
51
1.3 x 1.3
60
3
60
630
80
25
9830
 Oct. 2011
60
1.52 x 1.52 
65
3
90
600
100
30
7145
Oct. 2012
65
1.65 x 1.65
40
5
110
550
40
25
5320
 Oct. 2011
69
 1.75 x 1.75
45
5
125
520
50
35
5357
 Jan. 2014
60
1.52 x 1.52 
60
5
90
640
80
25
7145
Oct. 2012
65
1.65 x 1.65
60
5
110
600
80
25
5320
 Jan. 2014
69
1.75 x 1.75 
60
5
125
590
80
40
5357
March, 2011
80
2.03 x 2.03
60
8
135
650
120
90
3530
Nov. 2013
80
2.03 x 2.03
60
10
135
630
50
35
3530
March, 2011
79*158
2.00 x 4.00
30
10
200
400
180
180
1610
 June 2011 106*158 2.7 x 4.00 30 10 300 400 300 140 1210
March, 2011
80
2.03 x 2.03
40
10
135
560
50
30
3530
March, 2011
90
2.28 x 2.28
40
10
150
540
60
40
2745
March, 2011
98
2.50 x 2.50
40
10
160
500
80
50
2245
Dec, 2014
98
2.50 x 2.50
45
10
160
490
100
60
2245
March, 2011
106
2.70 x 2.70
40
10
160
460
100
50
1860
March, 2011
115
2.92 x 2.92
40
10
200
470
100
60
1570
Sep. 2013
115
2.92 x 2.92
45
10
200
470
120
70
1570
Jan. 2014
123
3.12 x 3.12
45
10
275
450
120
75
1350
Rev1 June 2011 
 106*138
2.70 x 3.50 
45
10
250
480
180
90
1400
Nov. 2013
90
2.28 x 2.28
60
10
150
600
60
40
2745
Jan. 2013
98
2.50 x 2.50
60
10
160
580
70
45
2245
Jun. 2011
106
2.70 x 2.70
60
10
180
570
80
60
1860
Rev1 June 2011
115
2.92 x 2.92
60
10
200
530
100
60
1570
Rev1 June 2011
106*138
2.70 x 3.50
30
15
250
470
200
100
1400
Rev1 June 2011
123
3.12 x 3.12
30
15
250
470
250
130
1350
March, 2011
115
2.92 x 2.92
40
15
200
500
120
60
1570
Feb. 2012 
123
3.12 x 3.12
40
15
250
490
100
70
1350
Oct. 2013
130
3.30 x 3.30
45
15
300
480
150
100
1200
Jan. 2013
115
2.92 x 2.92
45
15
200
520
120
60
1570
Jan. 2012 KDM-15045R1 120 3.05 x 3.05 45 15 250 500 60 75 1480
Jun. 2011
106*158
2.70 x 4.00
45
15
300
480
200
130
1210
June 2011
123
3.12 x 3.12
60
15
250
580
140
45
1350
Jan. 2014 
130
3.30 x 3.30
60
20
300
620
150
80
1200
Rev1 June 2011
106*158
2.70 x 4.00
45
30
300
560
200
130
1210
Rev2 June 2016 KDM-30045TX 123*158 3.12 x 4.00 45 30 350 550 200 130 1012
Rev4 July 2011
106*158
2.70 x 4.00
60
30
300
680
180
90
1210
Oct. 2013
150
3.81 x 3.81
40
40
400
560
150
150
845
 March, 2011
213
5.42 x 5.42
35
60
700
530
600
861
380
         
1IR@100ºC, Vr=Vr Rated mA 
 
 
 
 
The original technology provides increased stability of diodes to avalanche energy and high values of a repeating peak reverse current-IRRM influence.
 
All diode types meet requirements of JEDEC standard for ESD HBM influence stability (±15kV air discharge; ±8kV contact discharge).