______________________
| SCHOTTKY BARRIER RECTIFIERS |
Mechanical data. |
 |
| |
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| MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR DICE ARRAYS |
A - Die Size |
| |
B - Top Metal Size |
| KDM-XXYYY and KDM-XXYYYZ |
Ax-Bx=Ay-By= 140um |
| |
Scribe Line Width - 80um |
| Maximum Operating Junction Temperature — Tj=150ºC |
|
| |
Thickness: |
D=300um max. |
| |
|
|
| |
Top metal: |
a) Al (For Wire Bonding) |
| |
|
b) Al-Ni-Ag (For Soldering) |
| |
Back metal: |
Ti-Ni-Ag (For Soldering) |
Schottky diodes (dice on 6" wafers), low Vf
| Spec. |
Part Number |
Chip Size, mil |
Chip Size, mm |
Vrrm, V |
If(av), A |
Ifsm, A |
Vf@If(av), 25°C, mV
|
Ir@25°C, Vr=Vr Rated, uA |
Ir@125°C, Vr=Vr Rated, mA |
Gross dice q-ty per wafer, dice 6" |
|
Feb. 2013
|
|
55
|
1.40 x 1.40
|
40
|
3
|
80
|
510
|
35
|
23
|
7600
|
|
Oct. 2011
|
|
55
|
1.40 x 1.40
|
65
|
3
|
80
|
620
|
100
|
30
|
7600
|
|
March. 2013
|
|
69
|
1.75 x 1.75
|
40
|
3
|
125
|
450
|
50
|
35
|
5357
|
|
Jan. 2014
|
|
51
|
1.3 x 1.3
|
60
|
3
|
60
|
630
|
80
|
25
|
9830
|
|
Oct. 2011
|
|
60
|
1.52 x 1.52
|
65
|
3
|
90
|
600
|
100
|
30
|
7145
|
|
Oct. 2012
|
|
65
|
1.65 x 1.65
|
40
|
5
|
110
|
550
|
40
|
25
|
5320
|
|
Oct. 2011
|
|
69
|
1.75 x 1.75
|
45
|
5
|
125
|
520
|
50
|
35
|
5357
|
|
Jan. 2014
|
|
60
|
1.52 x 1.52
|
60
|
5
|
90
|
640
|
80
|
25
|
7145
|
|
Oct. 2012
|
|
65
|
1.65 x 1.65
|
60
|
5
|
110
|
600
|
80
|
25
|
5320
|
|
Jan. 2014
|
|
69
|
1.75 x 1.75
|
60
|
5
|
125
|
590
|
80
|
40
|
5357
|
|
March, 2011
|
|
80
|
2.03 x 2.03
|
60
|
8
|
135
|
650
|
120
|
90
|
3530
|
|
Nov. 2013
|
|
80
|
2.03 x 2.03
|
60
|
10
|
135
|
630
|
50
|
35
|
3530
|
|
March, 2011
|
|
79*158
|
2.00 x 4.00
|
30
|
10
|
200
|
400
|
180
|
180
|
1610
|
| June 2011 |
|
106*158 |
2.7 x 4.00 |
30 |
10 |
300 |
400 |
300 |
140 |
1210 |
|
March, 2011
|
|
80
|
2.03 x 2.03
|
40
|
10
|
135
|
560
|
50
|
30
|
3530
|
|
March, 2011
|
|
90
|
2.28 x 2.28
|
40
|
10
|
150
|
540
|
60
|
40
|
2745
|
|
March, 2011
|
|
98
|
2.50 x 2.50
|
40
|
10
|
160
|
500
|
80
|
50
|
2245
|
|
Dec, 2014
|
|
98
|
2.50 x 2.50
|
45
|
10
|
160
|
490
|
100
|
60
|
2245
|
|
March, 2011
|
|
106
|
2.70 x 2.70
|
40
|
10
|
160
|
460
|
100
|
50
|
1860
|
|
March, 2011
|
|
115
|
2.92 x 2.92
|
40
|
10
|
200
|
470
|
100
|
60
|
1570
|
|
Sep. 2013
|
|
115
|
2.92 x 2.92
|
45
|
10
|
200
|
470
|
120
|
70
|
1570
|
|
Jan. 2014
|
|
123
|
3.12 x 3.12
|
45
|
10
|
275
|
450
|
120
|
75
|
1350
|
|
Rev1 June 2011
|
|
106*138
|
2.70 x 3.50
|
45
|
10
|
250
|
480
|
180
|
90
|
1400
|
|
Nov. 2013
|
|
90
|
2.28 x 2.28
|
60
|
10
|
150
|
600
|
60
|
40
|
2745
|
|
Jan. 2013
|
|
98
|
2.50 x 2.50
|
60
|
10
|
160
|
580
|
70
|
45
|
2245
|
|
Jun. 2011
|
|
106
|
2.70 x 2.70
|
60
|
10
|
180
|
570
|
80
|
60
|
1860
|
|
Rev1 June 2011
|
|
115
|
2.92 x 2.92
|
60
|
10
|
200
|
530
|
100
|
60
|
1570
|
|
Rev1 June 2011
|
|
106*138
|
2.70 x 3.50
|
30
|
15
|
250
|
470
|
200
|
100
|
1400
|
|
Rev1 June 2011
|
|
123
|
3.12 x 3.12
|
30
|
15
|
250
|
470
|
250
|
130
|
1350
|
|
March, 2011
|
|
115
|
2.92 x 2.92
|
40
|
15
|
200
|
500
|
120
|
60
|
1570
|
|
Feb. 2012
|
|
123
|
3.12 x 3.12
|
40
|
15
|
250
|
490
|
100
|
70
|
1350
|
|
Oct. 2013
|
|
130
|
3.30 x 3.30
|
45
|
15
|
300
|
480
|
150
|
100
|
1200
|
|
Jan. 2013
|
|
115
|
2.92 x 2.92
|
45
|
15
|
200
|
520
|
120
|
60
|
1570
|
| Jan. 2012 |
KDM-15045R1 |
120 |
3.05 x 3.05 |
45 |
15 |
250 |
500 |
60 |
75 |
1480 |
|
Jun. 2011
|
|
106*158
|
2.70 x 4.00
|
45
|
15
|
300
|
480
|
200
|
130
|
1210
|
|
June 2011
|
|
123
|
3.12 x 3.12
|
60
|
15
|
250
|
580
|
140
|
45
|
1350
|
|
Jan. 2014
|
|
130
|
3.30 x 3.30
|
60
|
20
|
300
|
620
|
150
|
80
|
1200
|
|
Rev1 June 2011
|
|
106*158
|
2.70 x 4.00
|
45
|
30
|
300
|
560
|
200
|
130
|
1210
|
| Rev2 June 2016 |
KDM-30045TX |
123*158 |
3.12 x 4.00 |
45 |
30 |
350 |
550 |
200 |
130 |
1012 |
|
Rev4 July 2011
|
|
106*158
|
2.70 x 4.00
|
60
|
30
|
300
|
680
|
180
|
90
|
1210
|
|
Oct. 2013
|
|
150
|
3.81 x 3.81
|
40
|
40
|
400
|
560
|
150
|
150
|
845
|
|
March, 2011
|
|
213
|
5.42 x 5.42
|
35
|
60
|
700
|
530
|
600
|
861
|
380
|
1 — IR@100ºC, Vr=Vr Rated mA
The original technology provides increased stability of diodes to avalanche energy and high values of a repeating peak reverse current-IRRM influence.
All diode types meet requirements of JEDEC standard for ESD HBM influence stability (±15kV air discharge; ±8kV contact discharge).
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